sep. 2001 mitsubishi nch power mosfet FY5ACJ-03F high-speed switching use FY5ACJ-03F outline drawing dimensions in mm sop-8 application motor control, lamp control, solenoid control dc-dc converter, etc. 30 20 5 35 5 1.5 6.0 1.6 ?5~+150 ?5~+150 0.07 v gs = 0v v ds = 0v l = 10 h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 4v drive v dss ................................................................. 30v rds (on) (max) ............................................ 27m ? i d ........................................................................ 5a mitsubishi nch power mosfet FY5ACJ-03F high-speed switching use 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ? ? ? ?? ?? ? ? ? ?
sep. 2001 mitsubishi nch power mosfet FY5ACJ-03F high-speed switching use v (br)dss v (br)gss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) | y fs | c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr v v a ma v m ? m ? v s pf pf pf ns ns ns ns v c/w ns 30 20 1.0 1.5 21 34 0.105 10 600 200 90 10 15 50 20 0.75 40 10 0.1 2.0 27 48 0.135 1.10 78.1 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance tum-on delay time rise time tum-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 a, v ds = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 2.5a, v gs = 4v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 2.5a, v gs = 10v, r gen = r gs = 50 ? i s = 1.5a, v gs = 0v channel to air i s = 1.5a, d is /d t = 50a/ s power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 0.4 0.8 1.2 1.6 2.0 0 200 50 100 150 2 3 5 7 7 2 10 0 357 2 10 1 357 2 10 0 2 3 5 10 1 2 3 5 7 10 1 3 5 357 tw = 10 s t c = 25 c single pulse 100 s 100ms 10ms 1ms dc 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 4v 3v p d = 1.6w v gs = 10v,8v,6v,5v v gs = 10v,8v 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 4v 5v 3v tc = 25 c pulse test tc = 25 c pulse test p d = 1.6w 6v performance curves
sep. 2001 mitsubishi nch power mosfet FY5ACJ-03F high-speed switching use 10 ? 10 0 23 57 10 1 23 57 10 ? 10 1 2 3 5 7 10 0 2 3 5 7 10 2 2 3 5 7 v ds =10v pulse test 0 4 8 12 16 20 0246810 tc = 25 c v ds = 10v pulse test 10 ? 2 10 0 357 2 10 1 33 57 2 2 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c v gs = 0v f = 1mh z 10 ? 10 0 23 57 10 1 23 57 10 1 10 0 2 3 3 7 5 2 10 2 7 2 5 t d(off) t d(on) t r tch = 25 c v gs = 10v v dd = 15v r gen = r gs = 50 ? t f t c = 25 c, 75 c,125 c 0 10 20 30 40 50 10 ? 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 4v tc = 25 c pulse test 10v 0 0.4 0.8 1.2 1.6 2.0 0246810 tc = 25 c pulse test 5a 10a 2a i d = 15a on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m ? ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
sep. 2001 mitsubishi nch power mosfet FY5ACJ-03F high-speed switching use 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 10 ? 10 ? 10 ? 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma single pulse 0 0.8 1.6 2.4 3.2 4.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 10v i d = 5a pulse test p dm tw d = t tw t = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 = 0.01 d = 1.0 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 125 c 75 c 25 c v gs = 0v pulse test 0 2 4 6 8 10 048121620 15v 20v 25v v ds = tch = 25 c i d =5a t c = 10 ? gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c)
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